Tunneling Plasmonics in Bilayer Graphene.

نویسندگان

  • Z Fei
  • E G Iwinski
  • G X Ni
  • L M Zhang
  • W Bao
  • A S Rodin
  • Y Lee
  • M Wagner
  • M K Liu
  • S Dai
  • M D Goldflam
  • M Thiemens
  • F Keilmann
  • C N Lau
  • A H Castro-Neto
  • M M Fogler
  • D N Basov
چکیده

We report experimental signatures of plasmonic effects due to electron tunneling between adjacent graphene layers. At subnanometer separation, such layers can form either a strongly coupled bilayer graphene with a Bernal stacking or a weakly coupled double-layer graphene with a random stacking order. Effects due to interlayer tunneling dominate in the former case but are negligible in the latter. We found through infrared nanoimaging that bilayer graphene supports plasmons with a higher degree of confinement compared to single- and double-layer graphene, a direct consequence of interlayer tunneling. Moreover, we were able to shut off plasmons in bilayer graphene through gating within a wide voltage range. Theoretical modeling indicates that such a plasmon-off region is directly linked to a gapped insulating state of bilayer graphene, yet another implication of interlayer tunneling. Our work uncovers essential plasmonic properties in bilayer graphene and suggests a possibility to achieve novel plasmonic functionalities in graphene few-layers.

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عنوان ژورنال:
  • Nano letters

دوره 15 8  شماره 

صفحات  -

تاریخ انتشار 2015